Gate‐Tunable Potential Barrier on Dual‐Gate Graphene Transistor with Fluorocarbon Thin Film

Abstract This article reports on the charge transport characteristics across potential barrier generated by a local dual‐gate modulation at surface of p‐doped graphene via contact fluorocarbon (CF) thin film. Owing to simple physical contact, strong electron affinity fluorine atoms in CF stably increases hole density graphene, which leads massive p‐doping effect graphene. Then, height can be and modulated channel forming device structure. Different gate biases operation split electrical single into highly conductive region sparse density, creating large chemical difference boundary between two determines value height. Moreover, follow model metal–semiconductor junction well addition concentration discrepancy These results reveal that it is possible create an ideal controllable composed material using doped with